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Datasheet File OCR Text: |
NTE2586 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulsed Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC =200mA VCE = 5V, IC = 1A VCE = 10V, IC = 200mA VCB = 10V, f = 1MHz IC = 1.5A, IB = 300mA Min - - 15 8 - - - Typ - - - - 15 60 - Max 10 10 40 - - - 2.0 MHz pF V Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol VBE(sat) Test Conditions IC =1.5A, IB = 300mA Min - 1100 800 7 800 - - - Typ - - - - - - - - Max 1.5 - - - - 0.5 3.0 0.3 Unit V V V V V s s s Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 1.5A, IB1 = -IB2 = 300mA, L = 2mH, Clamped ton tstg tf VCC = 400V, IC = 2A, IB1 = 0.4A, IB2 = - 0.8A, RL = 200 .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54) |
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